AC450#16 for dielectrics

(Reactive) Sputtering of dielectric materials:
– Si3N4 (Silicon Nitride)
– SiO2 (Silicon Oxide)
– Al2O3 (Aluminium Oxide)
– Nb2O5 (Niobium Oxide)

on request:
– HfO2 (Hafnium Oxide)
– TiO2 (Reactively sputtered Titanium)
– NbxOy (Reactively sputtered Niobium)
– Si (Silicon)
– ITO (IndiumTin Oxide)
– Aluminium Nitride (AlN)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 10 mm.