Oxford Instruments Ionfab300Plus IBE/RIBE

The Oxford Instruments Ionfab300Plus is an ion beam etch (IBE) tool for physical directional etching of thin-film structures in metals, SiO2, SixNy, and other dielectrics using Ar. Besides IBE, the tool supports the addition of O2, N2, SF6, and CHF3 in the plasma chamber to perform reactive ion beam etching (RIBE) of, for example, bottom anti-reflective coatings (BARC) using a combination of Ar/O2 or Ar/N2 or purely N2. SF6 and/or CHF3 (either in combination with Ar and/or O2 and/or N2) are used to perform (slanted) RIBE of Si and SiO2 (and other oxides).

System features:

• He backside cooling for temperature-controlled etching.
• A Hiden Analytical SIMS endpoint detection system.
• Available gases for etching are Ar, O2, SF6, CHF3, and N2.
• The etching angle is often 20° but is variable between 0° and -65°.
• Rotation speed is often 20 RPM but is variable up to 30 RPM.

Substrate dimensions:

• Standard sample size 150 mm wafer with flat.
• 100 mm wafers are possible but need to be mounted on the stainless steel carrier plate.
• Small samples are possible but need to be mounted on the stainless steel carrier plate by Kapton tape.