Memsstar Orbis Alpha XeF2 vapour-phase etcher

The Memsstar Orbis Alpha XeF2 vapour-phase etcher is a system to etch silicon in a continuous and isotropic (conformal) manner and it is equipped with the high-selectivity module. Therefore, this system is suited for conformal etching of three-dimensional structures in silicon while using silicon oxide or silicon nitride as a masking material. It replaced our old pulsed XactiX e1 series XeF2 system as the Memsstar system showed superior results in terms of etch rate, etch uniformity (both planar and in three-dimensional structures), and selectivity towards frequently used mask materials.

The etch is strongly depending on mask design, layer thickness, confinement, and type of silicon. Therefore, all processing is done in collaboration with Henk-Willem Veltkamp!

System features:

• Connected gases: N2 and H2 (XeF2 is stored in a bubbler, through which N2 flows as carrier gas).
• Temperature controlled pedestal (25°C).
• Etch monitor based on SiF4 absorption spectroscopy.