SPTS LPX Pegasus

The SPTS Pegasus is a dual-source (inductively coupled plasma (ICP) + capacitively coupled plasma (CCP)) silicon deep reactive ion etching (DRIE) system. It is designed for Bosch-based processes for silicon etching with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching.

Features include:

• ICP power: max. 5000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), and argon (Ar)
• Substrate temperature range: -20°C to 20°C
• Electrostatic clamping (100 mm wafers) with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock