TEtske parallel-plate etcher

Custom-built (based on the Electrotech Special Research Systems PlasmaFab 310/340) reactive ion etch (RIE) system employing a parallel-plate design.
The system is used for etching various materials (silicon, dielectrics, compound semiconductors, metals, polymers, and photoresists) using fluorine-based plasmas.

Features include:

• RIE power: max. 100 Watt at 13.56 MHz
• Substrate temperature: 10°C (fixed)
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single wafer etcher
• Open-load RIE system