Film ALD | Picosun reactor-4 (ILP)

This Thermal Atomic Layer Deposition (T-ALD) system is for growth of metal oxide films.
Standardly double sided (conformal) deposition, back side may be protected using a carrier.

System features:
– High vacuum load lock (R1)
– Reactor temperature: 200°C to 500°C
– Precursor lines: 3x heated, 3x non heated
– Ozone generator

– Ellipsometry ports for in-situ analysis
– Argon carrier gas

Substrate dimensions:
– Sample size 4, 5, 6 inch wafers (no carrier needed)
– Compatible with smaller samples when using a carrier