ICPECVD

Oxford PlasmaPro100 ICPECVD

– Oxford PlasmaPro 100 ICPECVD
– gas control system for pressure controle and gas mixtures by flow gasses; SiH4, Ar, CH4, N2O, O2, N2, H2, SF6
– 300W RF generator
– 3 kW ICP RF generator
– Electrode temperature range 5°C to +400°C
– 4” wafer clamping with helium assisted heat transfer
– vacuum system; 1600 l/s turbo pump with a dry prevacuum pump
– scrubber for toxic gases
– combined loadlock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system