MOVPE AIXTRON R

R-Reactor. Metal organic vapour phase epitaxy. Dual Aixtron 200 (single 2 inch) and 200/4 (2 inch or 3 inch) reactor. The reactors can be used sequential by switching.

Precursors: TMIn, TMGa, TMAl, TMSb, DEZn, DTBSi.

Gasses: PH3, AsH3, H2S, Si2H6, HCl.

200 reactor: nanowire growth Au catalysed (VLS)

200/4 reactor: growth of InGaAsP thin layers for photonic integration, catalyst free nanowire growth. Optimized for 2 inch wafers. 3 inch wafers possible with thickness/composition variation near the edges.