Picosun Reactor-2

This Plasma Enhanced Atomic Layer Deposition (PEALD) system is for growth of metal nitride films.
Standardly double sided (conformal) deposition, back side may be protected using a carrier.

System features:
– High vacuum load lock (R1)
– RF plasma source adjustable from 100W to 3000W
– Reactor temperature: 200°C to 500°C
– Precursor lines: 3x heated, 3x non heated, 4x gases

– Ellipsometry ports for in situ analysis
– Argon carrier gas

Substrate dimensions:
– Sample size 4, 5, 6 inch wafers (no carrier needed)
– Compatible with smaller samples when using a carrier