Plasma 80

Oxford Plasmalab 80+
RF discharge for etching thin films. It‘s allowed, after communication with the NanoLab staff, to etch thin layers of some metals.

– Turbo pump vacuum system
– Process pressure 5-150 mbar
– Gas inlet system for process pressure control and gas mixtures
– Gasses; CHF3, SF6, O2, Ar
– Max 300 W for Reactive Ion Etching (RIE)
– Max 300 W for Inductive Coupled Plasma (ICP)
– ICP gives independent ion energy control
– Low damage
– Highly selective processing
– Uniform plasma etch
– Laser Interferometer endpoint detection
– Max sample area 90 mm diameter