Plasmalab80+ PECVD

RF-PECVD capacitively coupled plasma deposition of the following materials.
– cvd SiO2 (Using Silane and NOx) up to 5um per run
– cvd Si3N4 (Using Silane and NH3) up to 5um per run
– a-Si:H (Using Argon diluted Silane) up to 4um per run
– a-SiC:H (Using Silane and Methane) up to 4um per run

Typical process temperature 300C (possible process temperature 150 – 400 C)
Dual power source: possibility for pulsed plasma using RF/LF