PlasmaPro100 ICPECVD

ICPCVD remote plasma deposition of the following materials:
– cvd SiO2 (Using Silane and O2) up to 4 um per run
– cvd SiNx (Using Silane and N2) up to 4 um per run
– a-Si:H (Using Argon diluted Silane) up to 4 um per run
– a-SiC:H (Using Silane and Methane) up to 4 um per run

Typical process temperature 150 C (Possible process temperature 0C – 400C)
Possibility for RF table bias during deposition icw ICP plasma.