SPTS Omega Rapier 200 LPX

The SPTS Omega Rapier LPX plasma etcher is a triple-source (a primary inductively coupled plasma (ICP) + a secondary ICP + capacitively coupled plasma (CCP)) silicon deep reactive ion etch (DRIE) system. It is designed for Bosch-based processes with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching. The primary ICP source for high-density plasma generation and the secondary ICP source is used for uniformity and tilt adjustments.

Features include:

• Primary ICP power: max. 6000 Watt at 13.56 MHz
• Secondary ICP power: max. 3000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF with max. 2000 Watt
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), argon (Ar), and nitrogen (N2)
• Substrate temperature range: ??°C to ??°C
• Electrostatic clamping with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock