
Microwave (2.45 GHz) O2 plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of resist after plasma etching
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography
• surface modification
MESA+ Institute
Hallenweg 15, 7522 NH
Enschede, The Netherlands
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