TePla360

Microwave (2.45 GHz) plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of fluorocarbon residues after DRIE BOSCH processing (O2/CF4 plasma)
• stripping of resist in the presence of chromium (O2/H2 plasma)
• removal of organic residues on mask plates (O2/H2 plasma)
• stripping of resist after plasma etching (O2 plasma)
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation (O2 plasma)
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography (O2 plasma)
• surface modification (O2 plasma)

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