
(Reactive) Sputtering of superconducting materials
-Ti (Titanium) – up to 100 nm (~1 Å/s) (confocal)
-Nb (Niobium) – up to 200 nm (~2 Å/s) (confocal)
-Ta (Tantalum) – up to 200 nm (~1.5 Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 300 nm (~4 Å/s) using Alloy target
-TiN (Titanium Nitride) – up to 200 nm (~_ Å/s) (confocal)
-NbN (Niobium Nitride)- up to 200 nm (~_ Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 200 nm (~ _ Å/s) using confocal co-sputtering
Substrate heating during deposition possible. (RT -> 750 C)
Possibility of RF sample bias.
Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 1 mm.