Geplaatst: 2 mei 2026

This Plasma Enhanced Atomic Layer Deposition (PEALD) system is for growth of metal nitride films.
Standardly double sided (conformal) deposition, back side may be protected using a carrier.

System features:
– High vacuum load lock (R1)
– RF plasma source adjustable from 100W to 3000W
– Reactor temperature: 200°C to 500°C
– Precursor lines: 3x heated, 3x non heated, 4x gases

– Ellipsometry ports for in situ analysis
– Argon carrier gas

Substrate dimensions:
– Sample size 4, 5, 6 inch wafers (no carrier needed)
– Compatible with smaller samples when using a carrier

Geplaatst: 17 maart 2026

Geplaatst: 14 maart 2026

Plasma deposition of nitrides
TiN T=270C
NbN T=300C
NbTiN T=300C
TaN T=300C

Geplaatst:

Thermal deposition of:
Al2O3 (TMA) at T=105C/300C
HfO2 (TDMAH) at T=110C/150C

Sample size: Small samples up to 4 inch wafers.

Geplaatst:

Low temperature AlOx deposition

Process temperature: 40C
Precursors: TMA/H2O/O3

Sample size: Small samples up to 4 inch wafer