Geplaatst: 11 maart 2026

Microwave (2.45 GHz) plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of fluorocarbon residues after DRIE BOSCH processing (O2/CF4 plasma)
• stripping of resist in the presence of chromium (O2/H2 plasma)
• removal of organic residues on mask plates (O2/H2 plasma)
• stripping of resist after plasma etching (O2 plasma)
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation (O2 plasma)
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography (O2 plasma)
• surface modification (O2 plasma)

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Geplaatst:

Microwave (2.45 GHz) O2 plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of resist after plasma etching
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography
• surface modification

Geplaatst: 27 februari 2026

Used for Etching of InP, InGaAs, InGaAsP

Geplaatst: 26 februari 2026

Diener Electronic Pico QR-200-PCCE

– 99.999% O2 gas
– 300 Watt 13,56 MHz
– Vacuum chamber with hinged door Ø 130 mm (5.1“), L 300 mm (11.8“) or 600 mm (23.6“)