Geplaatst: 27 augustus 2026

The low pressure oxygen plasma tool is used for:

1. surface treatment
2. etching and cleaning of organic surfaces

Geplaatst: 28 mei 2026

Tepla Plasma 300 → Photoresist asher and surface treatment system.

Reactor type: Barrel
Available gasses: O2, Ar, CF4
Available options: Faraday cage
Classification: Contaminated (not C-MOS compatible)

Geplaatst: 11 maart 2026

Microwave (2.45 GHz) plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of fluorocarbon residues after DRIE BOSCH processing (O2/CF4 plasma)
• stripping of resist in the presence of chromium (O2/H2 plasma)
• removal of organic residues on mask plates (O2/H2 plasma)
• stripping of resist after plasma etching (O2 plasma)
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation (O2 plasma)
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography (O2 plasma)
• surface modification (O2 plasma)

Contact the administrator if you can´t find a recipe for your application.

Geplaatst:

Microwave (2.45 GHz) O2 plasma resist stripper for substrate sizes up to 100mm for the following process situations:
• stripping of resist after plasma etching
• stripping of resist after ion beam etching (IBE)
• stripping of resist after ion implantation
• alternative for wet stripping of resist (to prevent stiction and contamination)
• descum after lithography
• surface modification

Geplaatst: 27 februari 2026

Used for Etching of InP, InGaAs, InGaAsP