Geplaatst: 14 maart 2026

Deep Silicon Etch
Bosch and Cryo process

Geplaatst:

Geplaatst: 12 maart 2026

The SPTS Omega Rapier LPX plasma etcher is a triple-source (a primary inductively coupled plasma (ICP) + a secondary ICP + capacitively coupled plasma (CCP)) silicon deep reactive ion etch (DRIE) system. It is designed for Bosch-based processes with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching. The primary ICP source for high-density plasma generation and the secondary ICP source is used for uniformity and tilt adjustments.

Features include:

• Primary ICP power: max. 6000 Watt at 13.56 MHz
• Secondary ICP power: max. 3000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF with max. 2000 Watt
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), argon (Ar), and nitrogen (N2)
• Substrate temperature range: ??°C to ??°C
• Electrostatic clamping with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock

Geplaatst: 11 maart 2026

The SPTS Pegasus is a dual-source (inductively coupled plasma (ICP) + capacitively coupled plasma (CCP)) silicon deep reactive ion etching (DRIE) system. It is designed for Bosch-based processes for silicon etching with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching.

Features include:

• ICP power: max. 5000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), and argon (Ar)
• Substrate temperature range: -20°C to 20°C
• Electrostatic clamping (100 mm wafers) with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock

Geplaatst:

The Oxford Instruments PlasmaPro 100 Estrelas is a dual-source (inductively coupled plasma (ICP) + capacitively coupled plasma (CCP)) deep reactive ion etching (DRIE) system. It is designed for Bosch-based processes for high aspect ratio silicon etching (AR~30) using SF6/C4F8 plasmas, cryogenic etching using an SF6/O2 plasma, and unswitched pseudo-Bosch processes for high-precision 3-D nano-shaping of silicon using an SF6/C4F8 plasma.

Features include:

• Continuous mechanical quartz clamping with He backside cooling.
• Ideal sample size: 100 mm wafers with primary flat.
• ICP generator: 5 kW / 2 MHz. (max allowed ICP power: 4kW)
• CCP platen generators: 300 W HF (13.56 MHz) & 300 W LF (350 kHz, fixed pulsation at 200 Hz and 30% duty cycle)
• LN2 cooled platen and platen heater (available temperature range –120°C up to 100°C).
• Single-wafer load-lock.