Geplaatst: 4 juni 2026

Adixen AMS110 → Single wafer multi purpose etcher.

Reactor type: 1 coil ICP, equipped with 2 HF RF generators
Process modes: DRIE (Bosch), ICP-RIE (anisotropic), RIE (anisotropic), ICP (isotropic)
Available gasses: SF6, C4F8, O2, Ar, He, CH4
Etch capabilities: Si (Bosch DRIE process or isotropic), SiO2, TEOS, SiN
Wafer clamping: Electrostatic
Classification: Contaminated (not C-MOS compatible)

Geplaatst: 14 maart 2026

Deep Silicon Etch
Bosch and Cryo process

Geplaatst:

Geplaatst: 12 maart 2026

The SPTS Omega Rapier LPX plasma etcher is a triple-source (a primary inductively coupled plasma (ICP) + a secondary ICP + capacitively coupled plasma (CCP)) silicon deep reactive ion etch (DRIE) system. It is designed for Bosch-based processes with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching. The primary ICP source for high-density plasma generation and the secondary ICP source is used for uniformity and tilt adjustments.

Features include:

• Primary ICP power: max. 6000 Watt at 13.56 MHz
• Secondary ICP power: max. 3000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF with max. 2000 Watt
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), argon (Ar), and nitrogen (N2)
• Substrate temperature range: ??°C to ??°C
• Electrostatic clamping with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock

Geplaatst: 11 maart 2026

The SPTS Pegasus is a dual-source (inductively coupled plasma (ICP) + capacitively coupled plasma (CCP)) silicon deep reactive ion etching (DRIE) system. It is designed for Bosch-based processes for silicon etching with aspect ratios up to 70 using SF6/C4F8 plasmas and wafer-through etching.

Features include:

• ICP power: max. 5000 Watt at 13.56 MHz
• Advanced RF RIE power control for HF and LF
• Process gases: sulfur hexafluoride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), and argon (Ar)
• Substrate temperature range: -20°C to 20°C
• Electrostatic clamping (100 mm wafers) with He backside cooling
• Base pressure: < 2e-6 mbar
• Ideal sample size: 100 mm wafers
• Single-wafer loadlock