Geplaatst: 14 maart 2026

ICPCVD remote plasma deposition of the following materials:
– cvd SiO2 (Using Silane and O2) up to 4 um per run
– cvd SiNx (Using Silane and N2) up to 4 um per run
– a-Si:H (Using Argon diluted Silane) up to 4 um per run
– a-SiC:H (Using Silane and Methane) up to 4 um per run

Typical process temperature 150 C (Possible process temperature 0C – 400C)
Possibility for RF table bias during deposition icw ICP plasma.

Geplaatst:

E-beam evaporation of metals;
Argon Ion milling in evaporation chamber.

Sample size: small samples up to multiple 4 inch wafers (13)
Thickness limitation: 20 nm except for Au and Al (exceptions can be granted, but only if you stop by)

Geplaatst:

(Reactive) Sputtering of superconducting materials
-Ti (Titanium) – up to 100 nm (~1 Å/s) (confocal)
-Nb (Niobium) – up to 200 nm (~2 Å/s) (confocal)
-Ta (Tantalum) – up to 200 nm (~1.5 Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 300 nm (~4 Å/s) using Alloy target

-TiN (Titanium Nitride) – up to 200 nm (~_ Å/s) (confocal)
-NbN (Niobium Nitride)- up to 200 nm (~_ Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 200 nm (~ _ Å/s) using confocal co-sputtering

Substrate heating during deposition possible. (RT -> 750 C)
Possibility of RF sample bias.

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 1 mm.

Geplaatst:

RF-PECVD capacitively coupled plasma deposition of the following materials.
– cvd SiO2 (Using Silane and NOx) up to 5um per run
– cvd Si3N4 (Using Silane and NH3) up to 5um per run
– a-Si:H (Using Argon diluted Silane) up to 4um per run
– a-SiC:H (Using Silane and Methane) up to 4um per run

Typical process temperature 300C (possible process temperature 150 – 400 C)
Dual power source: possibility for pulsed plasma using RF/LF

Geplaatst:

Evaporator with oxidation chamber, kaufmann source substrate cleaning, substrate L N2 cooling.
Thickness rules for Plassys: no more than 200 nm of deposition total on a single sample.