Geplaatst: 4 juni 2026
Reactor type: 1 coil ICP, equipped with 2 HF RF generators
Process modes: DRIE (Bosch), ICP-RIE (anisotropic), RIE (anisotropic), ICP (isotropic)
Available gasses: SF6, C4F8, O2, Ar, He, CH4
Etch capabilities: Si (Bosch DRIE process or isotropic), SiO2, TEOS, SiN
Wafer clamping: Electrostatic
Classification: Contaminated (not C-MOS compatible)
Geplaatst: 17 maart 2026
Geplaatst: 14 maart 2026
Geplaatst:
Deep Silicon Etch
Bosch and Cryo process
Geplaatst:
Available gases are SF6(100sccm), He(100sccm), Ar(100sccm), N2(100sccm), O2(50sccm), Cl2(50sccm), BCl3(50sccm), HBr(50sccm)