Geplaatst: 26 februari 2026

NUV optical lithography system. Pattern resolution of sub micron in contact mode.

– Suss MABA6 UV Mask aligner with SCIL
– exposure lamp Hg 1000W
– normal exposure dose 25 mW/ cm2
– optics wavelength range UV300 280-350 nm (future UV 250 240-260 nm)
– exposure modes; proximity (1-300 mu gap), soft, hard and vacuum contact
– resolution depending on contact mode and mask <1 µm (future 0.5 µm)
– split field topside microscope with 5x, 10x and 20x objective
– bottom side microscope
– bottom and top alignment system accuracy 1 micron
– automatic wedge compensation
– mask holders; opening for 3”, 4”, 6” wafers and 30mm square
– sample chucks; 1”, 3” 4” and 6” wafers
– alignment stage; x +/- 10 mm Y +/- 5 mm theta 5°

SCIL (Substrate Conformal Imprint Lithography)
– This technique combines the advantages of a soft stamp with a rigid glass carrier for low pattern – – – – deformation and best resolution for large area patterning.
– resolution down to sub 50nm on a 6” area
– high aspect ratio structures