Geplaatst: 14 maart 2026

E-beam evaporation of metals;
Argon Ion milling in evaporation chamber.

Sample size: small samples up to multiple 4 inch wafers (13)
Thickness limitation: 20 nm except for Au and Al (exceptions can be granted, but only if you stop by)

Geplaatst:

Geplaatst:

Evaporator with oxidation chamber, kaufmann source substrate cleaning, substrate L N2 cooling.
Thickness rules for Plassys: no more than 200 nm of deposition total on a single sample.

Geplaatst:

(Reactive) Sputtering of superconducting metals and nitrides:
– Ti (Titanium) – up to 2000 nm (~7 Å/s)
– TiN (Titanium Nitride) – up to 2000 nm (~ Å/s)
– Al (Aluminium) – up to 3000 nm (~6 Å/s)
– MoRe (Molybdenum-Rhenium) – up to 500 nm (~ Å/s)
– NbTiN (Niobium-Titanium Nitride) – up to 2000 nm (~ Å/s)

On request:
– AlSi (AluminiumSilicon 99/1) – up to 2000 nm (~6 Å/s)
– Nb (Niobium) – up to 2000 nm (~5 Å/s)
– Ta (Tantalum) – up to 2000 nm (~ Å/s)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 2 mm.

Geplaatst:

Sputtering of metals:
– Cr (Chromium) – up to 500 nm (~ 4 Å/s)
– Mo (Molybdenum) – up to 500 nm (~8 Å/s)
– W (Tungsten) – up to 500 nm (~ 5 Å/s)
– NiCr 50/50 (NickelChromium)

On request:
– B (Boron)
– Ni (Nickel)
– Co (Cobalt) – up to 500 nm (~ 4 Å/s)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 10 mm.