Geplaatst: 16 juni 2026

PAS5500 /1100B ArF (193 nm) Scanner
Configured for 100mm wafers (4 inch)

Resolution: 100 nm
Single Machine Overlay accuracy: 15 nm

Interfaced with DUV Track
Standard DUV Stack: ~38 nm BARC / ~225 nm Resist / ~90 nm TARC

Geplaatst: 2 mei 2026

The DWL 2000 laser lithography system is a fast and flexible, high resolution pattern generator for mask making and direct writing. With a write area of up to 200 x 200 mm2 .

Geplaatst: 15 april 2026

Resists currently used in the system:
Olin 906-12
Olin 907-17
Olin 908-35

Geplaatst:

Exposure tool for photoresist with UV light (Near UV range LED i-line or g-h-i-lines).
Hard and vacuum contact, flood or proximity exposure. Front to backside alignment.
Pre-alignment option for wafer bonding (anodic, Si-direct).

Geplaatst:

Exposure tool with Displacement Talbot Lithography (DTL) technology.
To produce sub-micron dimensioned periodic lines or holes.
Any (thin) resist that is sensitive for near-UV can be used.
A mask with submicron structures has to be supplied by the user.
Alignment is possible.