Geplaatst: 14 maart 2026

In principal only used for exposing big substrates. Small samples are allowed for good reasons (for example backside alignment) and only after consulting tool owners.

Geplaatst:

Raith EBPG5200Plus HS electron beam lithography system for high resolution exposure of electron-sensitive resists,
equipped with 125 MHz UPG, high speed stage, large writing field, 10-position airlock and automatic aperture changer
Acceleration voltage: 100kV
Beam current: 100pA … 250 nA
Spot size: ~2 … > 350 nm (defocussed)
Main field resolution: 0.16 … 1.0 nm
Main field size: 160 (167.77216) … 1040 (1048.576) um (20 bit)
Sub field resolution: 0.08 … 0.5 nm
Sub field size: 1.31072 … 4.525 um (14 bit)
Beam step size: 0.08 … 4096 nm
Beam step frequency: 500 Hz … 125 MHz
Max pattern size: 200 x 200 mm
Laser interferometer resolution: 0.154 nm

Geplaatst:

Heidelberg microMLA Laserwriter
In principal only used to expose small samples. If you have a good reason to use it for big substrates (for example MLA150 can’t find edges of thick SU8 layer) you can use it after consulting the tool owners.

Geplaatst:

Aligner, exposure tool NUV ( 300-400nm)
350 W ( Hg lamp)

Geplaatst:

Raith EBPG5200 HS electron beam lithography system for high resolution exposure of electron-sensitive resists,
equipped with 125 MHz UPG, high speed stage, Z-lift, large 1mm writing field, 10-position airlock and automatic aperture changer
Acceleration voltage: 100 kV (50 kV possible)
Beam current: 100pA … 250 nA
Spot size: ~2 … > 350 nm (defocussed)
Main field resolution: 0.16 … 1.0 nm
Main field size: 160 (167.77216) … 1040 (1048.576) um (20 bit)
Sub field resolution: 0.08 … 0.5 nm
Sub field size: 1.31072 … 4.525 um (14 bit)
Beam step size: 0.08 … 4096 nm
Beam step frequency: 500 Hz … 125 MHz
Max pattern size: 200 x 200 mm
Laser interferometer resolution: 0.154 nm
In-field distortion: < 10 nm (mean + 3s)
Stitching: < 20 nm (mean + 3s)
Alignment: < 20 nm (mean + 3s)