Geplaatst: 14 maart 2026

ICPCVD remote plasma deposition of the following materials:
– cvd SiO2 (Using Silane and O2) up to 4 um per run
– cvd SiNx (Using Silane and N2) up to 4 um per run
– a-Si:H (Using Argon diluted Silane) up to 4 um per run
– a-SiC:H (Using Silane and Methane) up to 4 um per run

Typical process temperature 150 C (Possible process temperature 0C – 400C)
Possibility for RF table bias during deposition icw ICP plasma.

Geplaatst:

RF-PECVD capacitively coupled plasma deposition of the following materials.
– cvd SiO2 (Using Silane and NOx) up to 5um per run
– cvd Si3N4 (Using Silane and NH3) up to 5um per run
– a-Si:H (Using Argon diluted Silane) up to 4um per run
– a-SiC:H (Using Silane and Methane) up to 4um per run

Typical process temperature 300C (possible process temperature 150 – 400 C)
Dual power source: possibility for pulsed plasma using RF/LF

Geplaatst: 27 februari 2026

Plasma Enhanced Chemical Vapour Deposition

Geplaatst:

Plasma Enhanced Chemical Vapour Deposition

Geplaatst: 26 februari 2026

Oxford PlasmaPro100 ICPECVD

– Oxford PlasmaPro 100 ICPECVD
– gas control system for pressure controle and gas mixtures by flow gasses; SiH4, Ar, CH4, N2O, O2, N2, H2, SF6
– 300W RF generator
– 3 kW ICP RF generator
– Electrode temperature range 5°C to +400°C
– 4” wafer clamping with helium assisted heat transfer
– vacuum system; 1600 l/s turbo pump with a dry prevacuum pump
– scrubber for toxic gases
– combined loadlock system via cleanroom interface for the RIE/ICP etch Cobra and the ICPCVD system