Geplaatst: 4 juni 2026
Reactor type: 1 coil ICP, equipped with 2 HF RF generators
Process modes: DRIE (Bosch), ICP-RIE (anisotropic), RIE (anisotropic), ICP (isotropic)
Available gasses: SF6, C4F8, O2, Ar, He, CH4
Etch capabilities: Si (Bosch DRIE process or isotropic), SiO2, TEOS, SiN
Wafer clamping: Electrostatic
Classification: Contaminated (not C-MOS compatible)
Geplaatst: 14 maart 2026
(Reactive) Sputtering of superconducting materials
-Ti (Titanium) – up to 100 nm (~1 Å/s) (confocal)
-Nb (Niobium) – up to 200 nm (~2 Å/s) (confocal)
-Ta (Tantalum) – up to 200 nm (~1.5 Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 300 nm (~4 Å/s) using Alloy target
-TiN (Titanium Nitride) – up to 200 nm (~_ Å/s) (confocal)
-NbN (Niobium Nitride)- up to 200 nm (~_ Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 200 nm (~ _ Å/s) using confocal co-sputtering
Substrate heating during deposition possible. (RT -> 750 C)
Possibility of RF sample bias.
Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 1 mm.
Geplaatst: 27 februari 2026
A dry etching system to etch polymers (resist, polyimide, BCB etc..). It works with a cassette system and a robot to load and unload samples. The cassettes are for 100 mm wafers, smaller pieces are loaded on a 100 mm carrier.
Geplaatst:
Single wafer downstream plasma asher