Geplaatst: 4 juni 2026
Reactor type: 1 coil ICP, equipped with 2 HF RF generators
Process modes: DRIE (Bosch), ICP-RIE (anisotropic), RIE (anisotropic), ICP (isotropic)
Available gasses: SF6, C4F8, O2, Ar, He, CH4
Etch capabilities: Si (Bosch DRIE process or isotropic), SiO2, TEOS, SiN
Wafer clamping: Electrostatic
Classification: Contaminated (not C-MOS compatible)
Geplaatst: 14 maart 2026
Geplaatst:
Fluorine based RIE system
Geplaatst:
All users please notice this: SF6 processes only on F1 tool.
(Fluoro-Carbon related processed disabled)
Geplaatst:
Deep Silicon Etch
Bosch and Cryo process