Geplaatst: 23 april 2026

TCOater is a research tool with an extensive range of capabilities: reactive deposition, co-deposition, RF/DC, substrate heating(max. 400°C), adjustable substrate-magnetron distance and software to define up to eight different process steps (layers).

System features:
– High vacuum load lock
– 4x 2-inch magnetrons diagonal to substrate
– 1x 4-inch magnetrons perpendicular/eccentric to substrate
– 2x DC power supply
– 2x RF power supply
– Baratron, Pirani, Penning gauges
– Pressure controlled throttle valve
– 3x argon mass flow controller
– 1x oxygen mass flow controller
– 1x nitrogen mass flow controller

Substrate dimensions:
– Sample size: 100 mm wafer

Oxide and nitride materials can be grown by reactive sputtering of single-element targets. Compound targets such as SiO2 have to be sputtered in argon and oxygen to obtain a fully oxidized film.

Co-sputtering can be used to grow alloys and doped films. Ratios can be tuned by adjusting discharge power per magnetron.

Geplaatst:

T’COathy is a sputter coater dedicated to deposition of noble metals: Au, Pt and refractory metals: Cr, Ta and Ti. The standard target layout and user-friendly software allow for easy operation and very short lead time.

System features:
– Load lock
– 2x 2-inch magnetrons perpendicular wrt substrate for Au and Pt
– 3x 2-inch magnetrons diagonally wrt substrate for Cr, Ta, Ti
– 1x DC power supply with a switch
– Baratron, Pirani, Bayard-Alpert vacuum gauges

Substrate dimensions:
– Maximum sample size 100 x 100 x 3 mm
– Compatible with smaller samples

Geplaatst:

Sputterke is a multipurpose sputter coater for deposition of conductive materials.

System features:
– Load lock
– 3x 2-inch magnetrons with eccentric alignment to the substrate
– 1x DC power supply with a switch
– Pirani, Penning vacuum gauges
– 1x argon mass flow controller, reactor inlet

Substrate dimensions:
– Maximum sample size 100 x 100 x 6 mm
– Compatible with smaller substrates

Geplaatst: 17 maart 2026

Geplaatst: 14 maart 2026

(Reactive) Sputtering of superconducting materials
-Ti (Titanium) – up to 100 nm (~1 Å/s) (confocal)
-Nb (Niobium) – up to 200 nm (~2 Å/s) (confocal)
-Ta (Tantalum) – up to 200 nm (~1.5 Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 300 nm (~4 Å/s) using Alloy target

-TiN (Titanium Nitride) – up to 200 nm (~_ Å/s) (confocal)
-NbN (Niobium Nitride)- up to 200 nm (~_ Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 200 nm (~ _ Å/s) using confocal co-sputtering

Substrate heating during deposition possible. (RT -> 750 C)
Possibility of RF sample bias.

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 1 mm.