Geplaatst: 14 maart 2026

(Reactive) Sputtering of superconducting materials
-Ti (Titanium) – up to 100 nm (~1 Å/s) (confocal)
-Nb (Niobium) – up to 200 nm (~2 Å/s) (confocal)
-Ta (Tantalum) – up to 200 nm (~1.5 Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 300 nm (~4 Å/s) using Alloy target

-TiN (Titanium Nitride) – up to 200 nm (~_ Å/s) (confocal)
-NbN (Niobium Nitride)- up to 200 nm (~_ Å/s) (confocal)
-NbTiN (Niobium Titanium Nitride) – up to 200 nm (~ _ Å/s) using confocal co-sputtering

Substrate heating during deposition possible. (RT -> 750 C)
Possibility of RF sample bias.

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 1 mm.

Geplaatst:

(Reactive) Sputtering of superconducting metals and nitrides:
– Ti (Titanium) – up to 2000 nm (~7 Å/s)
– TiN (Titanium Nitride) – up to 2000 nm (~ Å/s)
– Al (Aluminium) – up to 3000 nm (~6 Å/s)
– MoRe (Molybdenum-Rhenium) – up to 500 nm (~ Å/s)
– NbTiN (Niobium-Titanium Nitride) – up to 2000 nm (~ Å/s)

On request:
– AlSi (AluminiumSilicon 99/1) – up to 2000 nm (~6 Å/s)
– Nb (Niobium) – up to 2000 nm (~5 Å/s)
– Ta (Tantalum) – up to 2000 nm (~ Å/s)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 2 mm.

Geplaatst:

Sputtering of metals:
– Cr (Chromium) – up to 500 nm (~ 4 Å/s)
– Mo (Molybdenum) – up to 500 nm (~8 Å/s)
– W (Tungsten) – up to 500 nm (~ 5 Å/s)
– NiCr 50/50 (NickelChromium)

On request:
– B (Boron)
– Ni (Nickel)
– Co (Cobalt) – up to 500 nm (~ 4 Å/s)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 10 mm.

Geplaatst:

(Reactive) Sputtering of dielectric materials:
– Si3N4 (Silicon Nitride)
– SiO2 (Silicon Oxide)
– Al2O3 (Aluminium Oxide)
– Nb2O5 (Niobium Oxide)

on request:
– HfO2 (Hafnium Oxide)
– TiO2 (Reactively sputtered Titanium)
– NbxOy (Reactively sputtered Niobium)
– Si (Silicon)
– ITO (IndiumTin Oxide)
– Aluminium Nitride (AlN)

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 10 mm.

Geplaatst:

E-beam evaporation of metals:
-Ti (Titanium) – up to 100 nm (max 2Å/s)
-Pd (Palladium) – up to 200 nm (max 2Å/s)
-Au (Gold) – up to 300 nm (max 2Å/s)
-Co (Cobalt) – up to 200 nm (max 1Å/s)
-Cr (Chromium) – up to 100 nm (max 2Å/s)
Deposition under an angle possible

Sputtering of Metals:
– Au (Gold) – up to 200nm (~20nm/min)

Argon Ion milling in the Loadlock

Samplesize: Small samples up to 4 inch wafer, maximum thickness ~ 3 mm.