Geplaatst: 11 maart 2026

High-temperature furnace for in-line compatible processing (ILP).
Annealing & Activation of: metal oxides, ALD-oxides, PLD-materials. Materials/substrates processed in this furnace cannot go into any other furnace system!

Use this furnace for:

• glass-silicon bonding
• densification of PECVD layers (Oxford 80)
• oxidation of tantalum (Ta)
• annealing of PECVD SiON (Oxford 80)
• annealing of Al2O3 (rare earth doping)
• annealing of metal stacks on silicon or glass
• oxidation of porous silicon and silicon carbide

Geplaatst:

High-temperature atmospheric furnace for dry-oxidation and annealing. Temperature range: 400°C – 1100°C. Substrates processed in this furnace may, under special conditions, be allowed in other furnace systems.
Use this furnace for:

• Ta or Ti oxidation
• densification of PECVD layers (Oxford 133)
• bonding with of doped layers
• annealing of Al layers with H2O

Geplaatst:

High-temperature furnace for in-line compatible processing (ILP).
Temperature range: 400°C – 1100°C.
Annealing & Oxidation of: silicon, ‘safe’ metals. Use this furnace for:

• formation of metal silicides (PtSi, TiSi, CoSi, MoSi) on silicon substrates
• annealing of ZrO2 or TiO2 in artificial air
• Annealing of bare sapphire

Geplaatst:

High-temperature atmospheric furnace for dry thermal oxidation. Process temperature range: 700-1150°C. Maximum thickness: +/-300nm.

Geplaatst:

High-temperature atmospheric furnace for wet thermal oxidation. Process temperature range: 700-1150°C.